STMicroelectronics SD56060 RF功率MOSFET LdmoST系列N沟道增强型横向RF功率晶体管

Technology: Si

Output Power: 60 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 148 W

Vgs - Gate-Source Voltage: + 20 V

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Vds - Drain-Source Breakdown Voltage: 65 V