STMicroelectronics SGT120R65AL 氮化镓场效应晶体管 650 V，典型75 mOhm，15 A，增强型PowerGaN晶体管

Fall Time: 9.7 ns

Rise Time: 6 ns

Technology: GaN

Unit Weight: 76 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: E-Mode

Qg - Gate Charge: 3 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 192 W

Vgs - Gate-Source Voltage: - 10 V, + 6 V

Typical Turn-On Delay Time: 4.1 ns

Typical Turn-Off Delay Time: 8.9 ns

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 155 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V