STMicroelectronics STB45N40DM2AG 高压汽车级N沟道400 V，0.063欧姆典型值38 A MDmesh DM2功率MOSFET

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Fall Time: 9.8 ns

Rise Time: 6.7 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 68 ns

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 72 mOhms

Vds - Drain-Source Breakdown Voltage: 400 V

Vgs th - Gate-Source Threshold Voltage: 4 V