STMicroelectronics STD5NM60-1 N沟MOSFET 600伏 5安

Width: 2.4 mm

Height: 6.2 mm

Length: 6.6 mm

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 340 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 96 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.4 S

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V