STMicroelectronics STD80N450K6 MOSFET N沟道 800 V，典型380 mOhm，10 A MDmesh K6 功率MOSFET，DPAK封装

Fall Time: 12.7 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 17.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 10.6 ns

Typical Turn-Off Delay Time: 28.8 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 450 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V