STMicroelectronics STF22N60DM6 MOSFETs N沟道 600 V，典型200 mOhm 15 A MDmesh DM6 功率MOSFET

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 18 nC

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 15 A

Rds On - Drain-Source Resistance: 255 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V