STMicroelectronics STFW40N60M2 MOSFET N沟道 600 V，典型0.078欧姆 34 A MDmesh M2 功率MOSFET，TO-3PF封装

Fall Time: 11 ns

Rise Time: 13.5 ns

Technology: Si

Unit Weight: 7 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 57 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 63 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 20.5 ns

Typical Turn-Off Delay Time: 96 ns

Id - Continuous Drain Current: 34 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 78 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2 V