STMicroelectronics STGB10H60DF IGBT晶体管沟槽栅场停止IGBT，H系列600V，10A高速

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 115 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 20 A