STMicroelectronics STGB18N40LZT4 IGBT晶体管 EAS 180 mJ-400 V

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 2.240 g

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Pd - Power Dissipation: 150 W

Maximum Gate Emitter Voltage: - 12 V, 16 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 420 V

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 30 A