STMicroelectronics STGD19N40LZ IGBT晶体管 汽车级 390 V 内部钳位 IGBT ESCIS 180 mJ

Technology: Si

Unit Weight: 350 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Pd - Power Dissipation: 125 W

Gate-Emitter Leakage Current: 625 uA

Maximum Gate Emitter Voltage: - 12 V, 16 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 390 V

Continuous Collector Current Ic Max: 25 A

Collector-Emitter Saturation Voltage: 1.35 V