STMicroelectronics STGD3HF60HDT4 IGBT晶体管 4.5A 600V IGBT 20V VGE 25A IFSM

Technology: Si

Unit Weight: 260.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 38 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.45 V

Continuous Collector Current at 25 C: 7.5 A