STMicroelectronics STGD3NB60SDT4 IGBT晶体管 N沟道 600伏 3安培

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 4 g

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Pd - Power Dissipation: 48 W

Continuous Collector Current: 3 A

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 6 A

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 6 A