STMicroelectronics STGD3NC120H-1 IGBT晶体管 PTD IGBT & IPM

Technology: Si

Unit Weight: 310 mg

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 105 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.3 V

Continuous Collector Current at 25 C: 16 A