STMicroelectronics STGD6NC60H-1 IGBT晶体管 N沟道 600 V，7 A 超高速IGBT

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 62.5 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 15 A