STMicroelectronics STGD7NB60ST4 IGBT晶体管 N沟道 600伏 7安培

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 55 W

Continuous Collector Current: 7 A

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 15 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 15 A