STMicroelectronics STGE200NB60S IGBT模块 N沟道 600伏 150安培

Width: 25.5 mm

Height: 9.1 mm

Length: 38.2 mm

Technology: Si

Unit Weight: 28 g

Configuration: Single Dual Emitter

Mounting Style: Through Hole

Pd - Power Dissipation: 600 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.2 V

Continuous Collector Current at 25 C: 200 A