STMicroelectronics STGF6M65DF2 IGBT晶体管沟槽栅场停止IGBT M系列，650 V 6 A低损耗

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 24.2 W

Gate-Emitter Leakage Current: +/- 250 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 12 A

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 12 A