STMicroelectronics STGIPQ3H60T-HL IGBT模块 SLLIMM nano 第二代系列 IPM，3 A，600 V，三相IGBT逆变桥

Technology: SiC

Unit Weight: 4 mg

Configuration: 3-Phase Inverter

Mounting Style: Through Hole

Pd - Power Dissipation: 12 W

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 3 A