STMicroelectronics STGP15H60DF IGBT晶体管沟槽栅H系列600V 15A高速

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 115 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 15 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 30 A