STMicroelectronics STGP20M65DF2 IGBT晶体管沟槽栅场停止IGBT M系列，650 V 20 A低损耗

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 166 W

Gate-Emitter Leakage Current: 250 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 40 A