STMicroelectronics STGSH80HB65DAG IGBT晶体管 汽车用 ACEPACK SMIT 半桥 650 V，80 A HB系列带二极管的IGBT

Technology: Si

Unit Weight: 8.200 g

Configuration: Dual

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 250 W

Gate-Emitter Leakage Current: 800 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 83 A