STMicroelectronics STGW39NC60VD IGBT晶体管 N沟道 MFT

Width: 5.15 mm

Height: 20.15 mm

Length: 15.75 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 250 W

Continuous Collector Current: 70 A

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 80 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 80 A