STMicroelectronics STGW40V60F IGBT晶体管 600V 40A 沟槽栅 1.8V Vce IGBT

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 283 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 2.35 V

Continuous Collector Current at 25 C: 80 A