STMicroelectronics STGWA25H120DF2 IGBT晶体管 沟槽栅场停止IGBT，H系列 1200 V，25 A 高速

Technology: Si

Unit Weight: 6.100 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 375 W

Continuous Collector Current: 25 A

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 50 A