STMicroelectronics STGWA30H65DFB2 晶体管 IGBT 芯片 N沟道 650V 30A 3引脚 TO-247 管式
ModelSTGWA30H65DFB2
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Product Range: HB2 Series
Power Dissipation: 167
Transistor Mounting: Through Hole
Transistor Case Style: TO-247
Operating Temperature Max: 175 °C
Continuous Collector Current: 50
Collector Emitter Voltage Max: 650
Collector Emitter Saturation Voltage: 1.65
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