STMicroelectronics STGWA30HP65FB2 IGBT晶体管 沟槽栅场停止 650 V，30 A 高速 HB2系列 IGBT

Technology: Si

Unit Weight: 6.100 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 167 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 50 A

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 50 A