STMicroelectronics STGWA30M65DF2AG IGBTs 汽车级沟槽门场停止 650 V，30 A 低损耗 M 系列 IGBT

Technology: Si

Unit Weight: 6.100 g

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Pd - Power Dissipation: 441 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 57 A

Collector-Emitter Saturation Voltage: 2.02 V

Continuous Collector Current at 25 C: 87 A