STMicroelectronics STGWA40H65DFB2 IGBT晶体管 沟槽栅场停止型，650 V，40 A，高速HB2系列IGBT

Technology: Si

Unit Weight: 6.100 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 230 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 72 A