STMicroelectronics STGWA40HP65FB IGBT晶体管沟槽栅场停止650 V，40 A高速HB系列IGBT

Technology: Si

Mounting Style: Through Hole

Pd - Power Dissipation: 227 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Continuous Collector Current at 25 C: 72 A