STMicroelectronics STGWA60V60DF IGBT晶体管 600 V, 60 A 超高速沟槽栅场停止IGBT

Technology: Si

Unit Weight: 6.100 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 375 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 80 A