STMicroelectronics STGWT30H60DFB IGBT晶体管沟槽栅场停止600 V，30 A高速HB系列IGBT

Technology: Si

Unit Weight: 6.756 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 260 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 60 A