STMicroelectronics STGYA50M120DF3 IGBT晶体管 沟槽栅场停止型，1200 V，50 A，低损耗M系列IGBT

Technology: Si

Unit Weight: 4.430 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 535 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 100 A