STMicroelectronics STI76NF75 MOSFET N沟道 75 V，0.0095 欧姆，80 A I2PAKSTripFET II 功率MOSFET

Fall Time: 30 ns

Rise Time: 100 ns

Technology: Si

Unit Weight: 2.387 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 160 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 66 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 9.5 mOhms

Vds - Drain-Source Breakdown Voltage: 75 V

Vgs th - Gate-Source Threshold Voltage: 2 V