STMicroelectronics STIB1060DM2T-L IGBT 硅模块 SLLIMM 第二代系列 IPM，三相逆变器，0.18 欧姆典型值 10 A，600 V 功率 MOSFET

Technology: Si

Unit Weight: 9.160 g

Configuration: 3-Phase Inverter

Mounting Style: Through Hole

Pd - Power Dissipation: 78 W

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current at 25 C: 10 A