STMicroelectronics STL52N60DM6 MOSFET N沟道 600 V，典型值0.084欧姆，30 A MDmesh DM6 功率MOSFET

Fall Time: 9.2 ns

Rise Time: 4.3 ns

Technology: Si

Unit Weight: 180 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 52 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 174 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 19.4 ns

Typical Turn-Off Delay Time: 63 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 84 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.75 V