STMicroelectronics STL76DN4LF7AG 汽车级双N沟道40 V，5 mOhm典型值40 A STripFET F7功率MOSFET

Fall Time: 10 ns

Rise Time: 4.3 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 17 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 71 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 39 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 6 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V