STMicroelectronics STLD128DNT4 双极型晶体管 NPN 功率晶体管

Width: 6.6 mm

Height: 2.4 mm

Length: 6.2 mm

Technology: Si

Unit Weight: 260.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 20 W

DC Current Gain hFE Max: 10

Emitter- Base Voltage VEBO: 9 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 8

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1 V