STMicroelectronics STN3N45K3 SuperMesh3 功率 MOSFET N 沟道 450V 3.2 欧姆 1.8 A SuperMESH3

Fall Time: 22 ns

Rise Time: 5.4 ns

Technology: Si

Unit Weight: 250 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 9.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 6.5 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4 Ohms

Vds - Drain-Source Breakdown Voltage: 450 V

Vgs th - Gate-Source Threshold Voltage: 3 V