STMicroelectronics STP4N90K5 MOSFET N沟道 900 V，典型1.90欧姆 3 A MDmesh K5 功率MOSFET

Fall Time: 25.5 ns

Rise Time: 11.8 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 60 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 10.5 ns

Typical Turn-Off Delay Time: 26.4 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.9 Ohms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 3 V