STMicroelectronics STP60N043DM9 MOSFET N沟道 600 V，典型38 mOhm，56 A MDmesh DM9 功率MOSFET

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 78.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 245 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 56 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 43 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V