STMicroelectronics STP60NF06L N沟MOSFET 60伏 60安

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Fall Time: 30 ns

Rise Time: 220 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 35 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 55 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V