STMicroelectronics STW20NM60FD N沟MOSFET 600伏 20安

Width: 5.15 mm

Height: 20.15 mm

Length: 15.75 mm

Fall Time: 22 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 214 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 25 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 290 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V