STMicroelectronics STW28NM50N N沟道MDmesh II功率MOSFET N沟道 500V 0.135 21A MDmesh II

Fall Time: 52 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 50 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 13.6 ns

Typical Turn-Off Delay Time: 62 ns

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.5 S

Rds On - Drain-Source Resistance: 158 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 4 V