STMicroelectronics STW37N60DM2AG 高压汽车级N沟道600 V，0.094欧姆典型值28 A MDmesh DM2功率MOSFET

Width: 15.75 mm

Height: 5.15 mm

Length: 20.15 mm

Fall Time: 10.7 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 54 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 210 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 21.2 ns

Typical Turn-Off Delay Time: 68 ns

Id - Continuous Drain Current: 28 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V