STMicroelectronics STW8NK80Z MOSFET N沟道 800伏 6.2A 稳压二极管 SuperMESH

Width: 5.15 mm

Height: 20.15 mm

Length: 15.75 mm

Fall Time: 28 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 46 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 140 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 48 ns

Id - Continuous Drain Current: 6.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.5 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V