Taiwan Semiconductor BSS123W RFG MOSFETs 100V，0.16A，单N沟道功率MOSFET

Fall Time: 51 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channe

Qg - Gate Charge: 2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 298 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 160 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.5 S

Rds On - Drain-Source Resistance: 5 Ohms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V