Taiwan Semiconductor TSM076NH04DCR RLG MOSFETs 40V，34A，双N沟道功率MOSFET

Fall Time: 5 ns

Rise Time: 49.3 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 19 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 55.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.9 ns

Typical Turn-Off Delay Time: 18.2 ns

Id - Continuous Drain Current: 34 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 42 S

Rds On - Drain-Source Resistance: 7.6 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V