Taiwan Semiconductor TSM160P02CS RLG MOSFETs -20, -11, 单P沟道

Fall Time: 28.8 ns

Rise Time: 43.5 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 27 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 16.2 ns

Typical Turn-Off Delay Time: 114 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V