Taiwan Semiconductor TSM1N80CW N沟道800V N沟道功率MOSFET

Fall Time: 25 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 250 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.36 S

Rds On - Drain-Source Resistance: 18 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 5 V