Taiwan Semiconductor TSM3443CX6 RFG 整流器 -20V，-4.7A，单P沟道功率MOSFET

Fall Time: 25 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 15 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 6 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 11 S

Rds On - Drain-Source Resistance: 48 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV